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2SD1857 |
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| Part Number | 2SD1857 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High breakdown voltage. (BVCEO = 120V) ·Low collector output capacitance. ·High transition frequency. (fT = 50MHz) ·Complement to Type 2SB1236 ·Minimum Lot-to-Lot variations for robust device perform... |
| Features |
ge IC= 1A; IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 5V
COB
Output Capacitance
IE=0; VCB= 10V, ftest= 1MHz
2SD1857
MIN TYP. MAX UNIT
2
V
1.5
V
1.0 μA
1.0 μA
120
390
50
MHz
30
pF
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for th... |
| Document |
 2SD1857 Data Sheet
PDF 206.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1850 |
Inchange Semiconductor |
Power Transistor |
|
| 2 | 2SD1851 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SD1852 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SD1853 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Darlington Transistor |
|
| 5 | 2SD1854 |
Sanyo Semicon Device |
NPN Epitaxial Silicon Transistor |
|