Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1275 / 2SB1236A. !External dimensions (Units : mm) 2SD2211 1.0 1.5 0.4 (1) 4.0 2.
1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1275 / 2SB1236A. !External dimensions (Units : mm) 2SD2211 1.0 1.5 0.4 (1) 4.0 2.5 0.5 3.0 0.5 (3) 1.5 0.4 1.5 4.5 1.6 (2) ROHM : MPT3 EIAJ : SC-62 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SD1857A Collector power dissipation 2SD2211 2SD1918 Tj Tstg PC Symbol VCBO VCEO .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1857 |
Rohm |
Power Transistor |
|
| 2 | 2SD1857 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 3 | 2SD1857 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2SD1857 |
UTC |
POWER TRANSISTOR |
|
| 5 | 2SD1857D |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 6 | 2SD1850 |
Inchange Semiconductor |
Power Transistor |
|
| 7 | 2SD1851 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SD1852 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SD1853 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Darlington Transistor |
|
| 10 | 2SD1854 |
Sanyo Semicon Device |
NPN Epitaxial Silicon Transistor |
|
| 11 | 2SD1855 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD1855 |
SavantIC |
SILICON POWER TRANSISTOR |
|