·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A ·Complements the 2SB1184 ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCE.
(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50uA; IC= 0 ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE=3V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 500mA; VCE= 5V MIN TYP. MAX UNIT 0.5 1.0 V 50 V 5 V 1.0 μA 1.0 μA 82 390 40 pF 90 MHz hFE Classifications P Q R 82-180 120-270 180-390 isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon NPN Power Tr.
Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) C.
Power Transistor FEATURES Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) Complements the 2SB1184. APPLICATIONS .
Elektronische Bauelemente 2SD1760 3A , 60V NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of .
SMD Type NPN Transistors 2SD1760 Transistors ■ Features ● Low VCE (sat) ● Complementary to 2SB1184 TO-252 6.50+0.15 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1761 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SD1761 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
3 | 2SD1762 |
Rohm |
Power Transistor | |
4 | 2SD1762 |
GME |
Power Transistor | |
5 | 2SD1762 |
JCST |
NPN Transistor | |
6 | 2SD1762 |
INCHANGE |
NPN Transistor | |
7 | 2SD1762 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SD1763 |
Rohm |
Power Transistor | |
9 | 2SD1763 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SD1763 |
INCHANGE |
NPN Transistor | |
11 | 2SD1763A |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
12 | 2SD1764 |
ROHM |
(2SDxxxx) Medium Power Transistor |