2SD1763A - Inchange Semiconductor

2SD1763A Silicon NPN Power Transistor

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Complement to Type 2SB1186A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Co.

Features

llector-Emitter Breakdown Voltage IC= 1mA; IB= 0 160 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 1 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1 μA hFE DC Current Gain IC= 0.1A; VCE= 5V 60 200 COB Output Capacitance IE= 0; VCB= 10V; ftest=1MHz 20 pF fT Current-Gain—Bandwidth Product IE= -0.1A; VCE.