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2SD1760 |
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| Part Number | 2SD1760 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A ·Complements the 2SB1184 ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and... |
| Features |
(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50uA; IC= 0
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE=3V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 500mA; VCE= 5V
MIN TYP. MAX UNIT
0.5
1.0
V
50
V
5
V
1.0
μA
1.0
μA
82
390
40
pF
90
MHz
hFE Classifications P Q R 82-180 120-270 180-390 isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon NPN Power Tr... |
| Document |
 2SD1760 Data Sheet
PDF 227.86KB |
| Distributor | Stock | Price | Buy |
|---|
