·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1187 ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base .
wn voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA , IB=0 IC=50µA , IE=0 IE=50µA , IC=0 IC=2A IB=0.2A IC=2A IB=0.2A VCB=60V IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=5V IE=0 ; VCB=10V ,f=1MHz 60 MIN 60 80 5 www.datasheet4u.com 2SD1761 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob TYP. MAX UNIT V V V 1.0 1.5 10 10 320 8 90 V V µA µA MHz pF hFE Classifications D 60-120 E 100-200 F 160-320 2 SavantIC Semic.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1187 ·Mi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1760 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | 2SD1760 |
GME |
Power Transistor | |
3 | 2SD1760 |
Rohm |
Power Transistor | |
4 | 2SD1760 |
SeCoS |
NPN Epitaxial Planar Silicon Transistor | |
5 | 2SD1760 |
Kexin |
NPN Transistors | |
6 | 2SD1762 |
Rohm |
Power Transistor | |
7 | 2SD1762 |
GME |
Power Transistor | |
8 | 2SD1762 |
JCST |
NPN Transistor | |
9 | 2SD1762 |
INCHANGE |
NPN Transistor | |
10 | 2SD1762 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SD1763 |
Rohm |
Power Transistor | |
12 | 2SD1763 |
SavantIC |
SILICON POWER TRANSISTOR |