2SD1755 - Panasonic Semiconductor

2SD1755 Silicon NPN epitaxial planar type Transistor

Power Transistors 2SD1755 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio 7.2±0.3 0.8±0.2 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm 1.0±0.2 q q q High forward current transfer ratio hFE which has satisfactory linearity High emitter to base voltage VEBO I type package enabling direct soldering of the radiating f.

Features

1.1±0.1 0.75±0.1 0.85±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 Ratings 100 60 15 12 6 3 15 1.3 150
  –55 to +150 Unit V 10.2±0.3 7.2±0.3 V V A A A 3.0±0.2 1.0 max. 2.5 1.1±0.1 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.