2SD1751 - Panasonic Semiconductor

2SD1751 Silicon NPN triple diffusion planar type Transistor

Power Transistors 2SD1751 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1170 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q 10.0 –0. +0.3 7.2±0.3 0.8±0.2 1.1±0.1 0.85±0.1 0.4±0.1 q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I ty.

Features

q q 10.0
  –0. +0.3 7.2±0.3 0.8±0.2 1.1±0.1 0.85±0.1 0.4±0.1 q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 60 6 4 2 15 1.3 150
  –55 to +150 Unit V 1.0±0.2 0.75±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=.