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2SD1755 |
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| Part Number | 2SD1755 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power Transistors 2SD1755 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio 7.2±0.3 0.8±0.2 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm 1.0±0.2 q q q High f... |
| Features |
1.1±0.1 0.75±0.1
0.85±0.1 0.4±0.1
2.3±0.2 4.6±0.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.5±0.2 2.0±0.2
7.0±0.3
Unit: mm
0 to 0.15
Ratings 100 60 15 12 6 3 15 1.3 150 –55 to +150 Unit V 10.2±0.3 7.2±0.3 V V A A A 3.0±0.2 1.0 max. 2.5 1.1±0.1 0.75±0.1 0.5 max. 0.9±0.1 0 to 0... |
| Document |
 2SD1755 Data Sheet
PDF 57.91KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1750 |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar type Transistor |
|
| 2 | 2SD1750A |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar type Transistor |
|
| 3 | 2SD1751 |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar type Transistor |
|
| 4 | 2SD1752 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Transistor |
|
| 5 | 2SD1752A |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Transistor |
|