2SD1754A - Panasonic Semiconductor

2SD1754A Silicon NPN triple diffusion planar type Transistor

Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 7.2±0.3 0.8±0.2 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm 1.0±0.2 q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the rad.

Features

1.1±0.1 0.75±0.1 0.85±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1754 2SD1754A 2SD1754 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 3.0±0.2 10.2±0.3 1.0 max. Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature V A A A 2.3±0.2 1.1±0.1 0.75±0.1 2.5 0.5 max. 0.9±0.1 0 to 0.15 1 2 3 W ˚C ˚C 4.6±0.4 1:Base 2:Collector .