2SD1727 |
Part Number | 2SD1727 |
Manufacturer | Inchange Semiconductor |
Description | ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for h... |
Features |
E= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.4A
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 750V; IE= 0 VCB= 1500V; IE= 0
VECF
C-E Diode Forward Voltage
IF= 1.5A
fT
Transition Frequency
IC= 0.5A; VCE= 10V
Switching Times, Resistive Load
ts
Storage Time
tf
Fall Time
IC= 1A; IB1= 0.3A; IB2= 0.6A, VCC= 200V
2SD1727
MIN TYP MAX UNIT
7
V
8.0
V
1.5
V
5
25
10 μA
1.0 mA
1.5
V
2
MHz
1.0
μs
0.2
μs
NOTICE: ISC reserves the rights to make changes o... |
Document |
2SD1727 Data Sheet
PDF 215.26KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1720 |
Inchange Semiconductor |
Power Transistor | |
2 | 2SD1722 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
3 | 2SD1723 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | 2SD1724 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
5 | 2SD1725 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |