2SD1709 - Inchange Semiconductor

2SD1709 Silicon NPN Power Transistor

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vo.

Features

Saturation Voltage IC= 4.5A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC Current Gain tf Fall Time IC= 0.5A ; VCE= 5V IC= 4A , IB1= 0.8A ; IB2= 1.6A PW=20μs; Duty Cycle≤1% 2SD1709 MIN TYP. MAX UNIT 800 V 5.0 V 1.5 V 10 μA 40 130 mA 8 0.5 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our p.