2SD1706 - Inchange Semiconductor

2SD1706 Silicon NPN Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 7A ·Complement to Type 2SB1155 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P.

Features

(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.35A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A VBE(sat)-1 Base -Emitter Saturation Voltage IC= 7A; IB= 0.35A VBE(sat)-2 Base -Emitter Saturation Voltage IC= 15A; IB= 1.5A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 2V hFE-2 DC Current Gain IC= 3A; VCE= 2V hFE-3 DC Current Gain IC= 8A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V .