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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 8A ·Complement to Type 2SB1156 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P.
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A VBE(sat)-1 Base -Emitter Saturation Voltage IC= 8A; IB= 0.4A VBE(sat)-2 Base -Emitter Saturation Voltage IC= 20A; IB= 2A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 2V hFE-2 DC Current Gain IC= 3A; VCE= 2V hFE-3 DC Current Gain IC= 10A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V Swit.
2SD1707 - Panasonic Semiconductor
Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm (0.7) For power switching Complementary to 2SB115.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1700 |
NEC |
NPN SILICON TRANSISTOR |
|
| 2 | 2SD1701 |
NEC |
NPN SILICON TRANSISTOR |
|
| 3 | 2SD1702 |
NEC |
NPN Transistor |
|
| 4 | 2SD1705 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD1705 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1706 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | 2SD1709 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | 2SD1710 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD1710 |
MCC |
NPN Silicon Power Transistors |
|
| 10 | 2SD1710 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SD1710 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
| 12 | 2SD1710A |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|