Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
DATA SHEET SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat) • Large power dissipation TO-126 type power transistor • Complementary transistor: 2SB1149 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collec.
• High DC current gain due to Darlington connection
• Large current capacity and low VCE(sat)
• Large power dissipation TO-126 type power transistor
• Complementary transistor: 2SB1149
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Total power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO IC(DC) IC(pulse)
* PT (Ta = 25°C) PT (Tc = 25°C)
Tj Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings 150 100 8.0 ±3.0 ±5.0 1.3 1.
2SD1692 - INCHANGE
·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 100V(min.) ·DC Current Gain— : hFE = 2000(Min.) @ IC= 1.5 A ·Comple.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1691 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1691 |
UTC |
NPN SILICON TRANSISTOR |
|
| 3 | 2SD1691 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD1691T |
SEMTECH |
NPN Silicon Epitaxial Power Transistor |
|
| 5 | 2SD1693 |
NEC |
NPN SILICON DARLINGTON TRANSISTOR |
|
| 6 | 2SD1694 |
NEC |
NPN SILICON POWER TRANSISTOR |
|
| 7 | 2SD1695 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 8 | 2SD1697 |
NEC |
NPN SILICON TRANSISTOR |
|
| 9 | 2SD1698 |
NEC |
NPN SILICON TRANSISTOR |
|
| 10 | 2SD1699 |
NEC |
NPN Silicon Epitaxial Transistor |
|
| 11 | 2SD1600 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD1601 |
Inchange Semiconductor |
Power Transistor |
|