2SD1691T - SEMTECH

2SD1691T NPN Silicon Epitaxial Power Transistor

ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current .

Features

turation Voltage at IC = 2 A, IB = 0.2 A Turn-on time Storage time Fall time at IC = 2 A, IB1 = -IB2 = 0.2 A,RL = 5 Ω, VCC = 10 V Symbol Min. Max. Unit hFE hFE hFE hFE hFE ICBO IEBO VBE(sat) VCE(sat) Ton Tstg tf 100 160 200 60 50 - 200 320 400 10 10 1.2 0.3 1 2.5 1 µA µA V V µs µs µs SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/03/2006 Free Datasheet http://www.datasheet4u.com/ .