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·With TO-126 package ·Complement to type 2SB1151 ·Low saturation voltage ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC converter ·Driver of solenoid or motor PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAM.
ration voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Turn-on time Storage time Fall time IC=2A; IB1=-IB2=0.2A RL=5.0?;VCC@10V CONDITIONS IC=2.0A ;IB=0.2A IC=2.0A ;IB=0.2A VCB=50V; IE=0 VEB=7V; IC=0 IC=0.1A ; VCE=1V IC=2A ; VCE=1V IC=5A ; VCE=1V 60 100 50 0.2 1.1 0.2 MIN www.datasheet4u.com 2SD1691 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 ton tstg tf TYP. MAX 0.3 1.2 10 10 UNIT V V µA µA 400 1.0 2.5 1.0 µs µs µs hFE-2 Classifications M 100-200 L 160-320 K 200-400 2 SavantIC Semiconductor Product Specification Silic.
2SD1691 - INCHANGE
·High Collector Current -IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max.)@ IC= 2A ·Complement to Type 2SB.
2SD1691 - UTC
, at any time and without notice. This document supersedes and replaces all information supplied prior to the publicatio.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1691T |
SEMTECH |
NPN Silicon Epitaxial Power Transistor |
|
| 2 | 2SD1692 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1692 |
NEC |
NPN Transistor |
|
| 4 | 2SD1693 |
NEC |
NPN SILICON DARLINGTON TRANSISTOR |
|
| 5 | 2SD1694 |
NEC |
NPN SILICON POWER TRANSISTOR |
|
| 6 | 2SD1695 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 7 | 2SD1697 |
NEC |
NPN SILICON TRANSISTOR |
|
| 8 | 2SD1698 |
NEC |
NPN SILICON TRANSISTOR |
|
| 9 | 2SD1699 |
NEC |
NPN Silicon Epitaxial Transistor |
|
| 10 | 2SD1600 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SD1601 |
Inchange Semiconductor |
Power Transistor |
|
| 12 | 2SD1602 |
Inchange Semiconductor |
Power Transistor |
|