2SD1264 - INCHANGE

2SD1264 NPN Transistor

·Collector-Emitter Breakdown Voltage : V(BR)CEO= 150V(Min) ·High Collector Power Dissipation ·Complement to Type 2SB940 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifications and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .

Features

oltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 100μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 0.4A; VCE= 10V ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 0.15A; VCE= 10V hFE-2 DC Current Gain IC= 0.4A; VCE= 10V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V  hFE-1 Classifications Q P 60-140 100-240 2SD1264 MIN TYP. MAX UNIT 150 V 200 V 6 V 1..