Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB939 and 2SB939A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the p.
q q q
High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 80 60 80 7 12 8 45 1.3 150
–55 to +150 Unit V
1.5±0.1
1.5max.
10.5min. 2.0
1.1max.
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1262 2SD1262A 2SD1262 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2 6.0±0.3
10.0±0.3
emitter voltage.
Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington For midium speed power switchin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1260 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
2 | 2SD1260 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
3 | 2SD1260A |
Panasonic Semiconductor |
Silicon PNP Transistor | |
4 | 2SD1260A |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
5 | 2SD1261 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
6 | 2SD1261 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
7 | 2SD1261A |
Panasonic Semiconductor |
Silicon PNP Transistor | |
8 | 2SD1261A |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
9 | 2SD1262A |
Panasonic Semiconductor |
Silicon PNP Transistor | |
10 | 2SD1262A |
Panasonic Semiconductor |
Silicon NPN Transistor | |
11 | 2SD1263 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
12 | 2SD1263 |
SavantIC |
SILICON POWER TRANSISTOR |