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2SD1264 |
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| Part Number | 2SD1264 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 150V(Min) ·High Collector Power Dissipation ·Complement to Type 2SB940 ·Minimum Lot-to-Lot variations for robust device performance and reliable operat... |
| Features |
oltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 100μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.4A; VCE= 10V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 0.15A; VCE= 10V
hFE-2
DC Current Gain
IC= 0.4A; VCE= 10V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
hFE-1 Classifications Q P 60-140 100-240 2SD1264 MIN TYP. MAX UNIT 150 V 200 V 6 V 1.... |
| Document |
 2SD1264 Data Sheet
PDF 211.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1260 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor |
|
| 2 | 2SD1260 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SD1260A |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SD1260A |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor |
|
| 5 | 2SD1261 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor |
|