Power Transistors 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1260 and 2SD1260A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circui.
1.5max.
10.5min. 2.0
1.1max.
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB937 2SB937A 2SB937 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2
emitter voltage 2SB937A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A
2.0 10.0±0.3
6.0±0.3
1.5
–0.4
3.0
–0.2
A W ˚C ˚C
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
1
2
3.
Power Transistors 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington For power amplification and switching Co.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1260 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
2 | 2SD1260 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
3 | 2SD1261 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
4 | 2SD1261 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
5 | 2SD1261A |
Panasonic Semiconductor |
Silicon PNP Transistor | |
6 | 2SD1261A |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
7 | 2SD1262 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
8 | 2SD1262 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
9 | 2SD1262A |
Panasonic Semiconductor |
Silicon PNP Transistor | |
10 | 2SD1262A |
Panasonic Semiconductor |
Silicon NPN Transistor | |
11 | 2SD1263 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
12 | 2SD1263 |
SavantIC |
SILICON POWER TRANSISTOR |