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·With TO-3 package ·Wide area of safe operation ·High DC current gain ·Darlington APPLICATIONS ·Power regulator for line operated TV PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter volta.
ration voltage Base-emitter on voltage Emitter cut-off current DC current gain CONDITIONS IC=100mA ;IB=0 IC=100mA ;IE=0 IC=0.5A ;IB=1mA IC=1A; IB=1mA IC=0.5A;VCE=5V VEB=6V; IC=0 IC=0.5A ; VCE=5V 2000 MIN 45 45 www.datasheet4u.com 2SD1208 SYMBOL VCEO VCBO VCEsat-1 VCEsat-2 VBE IEBO hFE TYP. MAX 75 75 1.5 2.5 1.8 0.1 20000 UNIT V V V V V mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1208 Fig.2 outline dimentions 3 .
2SD1208 - Toshiba
: 33 SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER REGULATOR FOR LINE OPERATED TV. FEATURES . Excellent Wide S.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1200 |
ROHM |
NPN Silicon Transistor |
|
| 2 | 2SD1202 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1204 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD1205 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD1205A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD1207 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 7 | 2SD1207 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 8 | 2SD1207 |
ON Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SD1209 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SD1209K |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SD1210 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD1211 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|