Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington For low-frequency amplification 6.9±0.1 0.4 Unit: mm 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q 1.5 1.5 R0.9 R0.9 q 0.85 0.55±0.1 1.25±0.05 0.45±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1205 2SD1205A 2SD1205 VCEO VEBO ICP I.
q
1.5
1.5 R0.9 R0.9
q
0.85
0.55±0.1
1.25±0.05
0.45±0.05
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1205 2SD1205A 2SD1205 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO
(Ta=25˚C)
3 2 1
Ratings 30 60 25 50 5 750 500 400 150
–55 ~ +150
Unit V
1:Base 2:Collector 3:Emitter
2.5 2.5
emitter voltage 2SD1205A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW ˚C ˚C
EIAJ:SC
–71 M Type Mold Package
Internal Connection
C B
≈200Ω
E
s Electrical Characteristics
Paramet.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1200 |
ROHM |
NPN Silicon Transistor |
|
| 2 | 2SD1202 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1204 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD1205A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD1207 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 6 | 2SD1207 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 7 | 2SD1207 |
ON Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SD1208 |
Toshiba |
NPN Transistor |
|
| 9 | 2SD1208 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SD1209 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SD1209K |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD1210 |
INCHANGE |
NPN Transistor |
|