2SD1204 - INCHANGE

2SD1204 NPN Transistor

·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-.

Features

sistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1204 MIN TYP MAX UNIT VBCEO(SUS) Collector-Emitter Sustaining Voltage I = CB B 50mA; I = BB B 0 400 V VBCE(sat)-1 Collector-Emitter Saturation Voltage I = CB B 8 A; I = BB B 100mA 1.6 V VBCE(sat)-2 Collector-Emitter Saturation Voltage I = CB B 10 A; I = BB B 250mA 1.8 V VBCE(sat)-3 Collector-Emitter Saturation Voltage I = CB B 12 A; I = BB B 300mA 2.0 V VBBE(sat)-1 Base-Emitter Saturation Voltage I = CB B 8 A; I = BB B 100mA 2.2 V VBBE(sat.