2SD1202 - INCHANGE

2SD1202 NPN Transistor

·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-.

Features

sistor 2SD1202 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA 1.6 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current IC= 8 A; IB= 100mA VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj= 125℃ VCE= 400V;IB= 0 2.2 V 1.0 5.0 mA 1.0 mA IEBO Emitter Cutoff Current VEB=.