2SD1187 - Inchange Semiconductor

2SD1187 Silicon NPN Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS.

Features

L PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6.0A; IB= 0.3A 0.3 0.5 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 6.0A; IB= 0.3A VCB= 100V ; IE= 0 0.9 1.4 V 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 1A ; VCE= 1V 70 240 hFE-2 DC Current Gain IC= 6A ; VCE= 1V 30 COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz 350 pF fT Current-Gain—Bandwidth Product Switching times ton Tur.