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·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio and radio frequency power amplifiers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Colle.
ter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA; IB=0 IC=100µA; IE=0 IE=100µA ; IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=120V; IE=0 VEB=3V; IC=0 IC=150mA ; VCE=5V 100 MIN www.datasheet4u.com 2SD1180 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. 110 120 5 MAX UNIT V V V 0.7 1.3 1.0 1.0 V V µA µA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1180 Fig.2 Outline dimensions 3 .
2SD1180 - INCHANGE
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) ·Low collector saturation voltage ·With TO-126 package.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1183 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1184 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1185 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD1185 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD1186 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1186 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD1187 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 8 | 2SD1187 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 9 | 2SD1189 |
Rohm |
NPN Transistor |
|
| 10 | 2SD110 |
Inchange Semiconductor Company |
Silicon NPN Power Transistor |
|
| 11 | 2SD1101 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 12 | 2SD1101 |
Guangdong Kexin Industrial |
Silicon NPN Transistor |
|