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2SD1187 |
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| Part Number | 2SD1187 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6.0A ·Minimum Lot-to-Lot variations for robust devi... |
| Features |
L
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6.0A; IB= 0.3A
0.3 0.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 6.0A; IB= 0.3A VCB= 100V ; IE= 0
0.9 1.4
V
10 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10 μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 1V
70
240
hFE-2
DC Current Gain
IC= 6A ; VCE= 1V
30
COB
Output Capacitance
IE= 0; VCB= 10V;ftest= 1.0MHz
350
pF
fT
Current-Gain—Bandwidth Product
Switching times
ton
Tur... |
| Document |
 2SD1187 Data Sheet
PDF 199.00KB |
| Distributor | Stock | Price | Buy |
|---|
