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2SD1180 |
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| Part Number | 2SD1180 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) ·Low collector saturation voltage ·With TO-126 package ·Minimum Lot-to-Lot variations for robust device performance and reliable opera... |
| Features |
d
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
V(BR)CBO Collector-base breakdown voltage
IC=100µA; IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat)) Base-emitter saturation voltage
IC= 1A; IB= 0.2A
ICBO
Collector Cutoff Current
VCE= 120V; IE= 0
IEBO
Emitter cut-off current
VEB=3V; IC=0
hFE
DC Current Gain
IC=150mA; VCE= 5V
MIN TYP. MAX UNIT
100
V
120
V
5
V
0.7
V
1.3
V
1
μA
1
μA
100
NOTICE： ISC reserves the rights to make changes ... |
| Document |
 2SD1180 Data Sheet
PDF 179.38KB |
| Distributor | Stock | Price | Buy |
|---|
