2SD1168 - INCHANGE

2SD1168 NPN Transistor

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCER Collect.

Features

= 10Ω; L= 2mH VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 hFE DC Current Gain IC= 1A; VCE= 4V tf Fall Time tstg Storage Time IC= 1.5A , IB1= 0.2A, IB2= 0.7A  hFE classifications Q P 9-18 15-25 2SD1168 MIN TYP. MAX UNIT 5 V 800 V 1.0 V 1.5 V 50 μA 1 mA 9 25 0.5 μs 2.0 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein i.