2SD1168 INCHANGE NPN Transistor Datasheet, en stock, prix

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2SD1168

INCHANGE
2SD1168
2SD1168 2SD1168
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Part Number 2SD1168
Manufacturer INCHANGE
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design...
Features = 10Ω; L= 2mH VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 hFE DC Current Gain IC= 1A; VCE= 4V tf Fall Time tstg Storage Time IC= 1.5A , IB1= 0.2A, IB2= 0.7A
 hFE classifications Q P 9-18 15-25 2SD1168 MIN TYP. MAX UNIT 5 V 800 V 1.0 V 1.5 V 50 μA 1 mA 9 25 0.5 μs 2.0 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein i...

Document Datasheet 2SD1168 Data Sheet
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