2SD1160 - Toshiba Semiconductor

2SD1160 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications 2SD1160 Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-b.

Features

(i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit BASE COLLECTOR ≈ 800 Ω EMITTER 1 2006-11-21 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter sustaining voltage DC current ga.