2SD1162 - Inchange Semiconductor

2SD1162 Silicon NPN Darlington Power Transistor

·High DC Current Gain- : hFE= 400(Min.)@IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage .

Features

EO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 5mA ICBO Collector Cutoff Current VCB= 400V; IE= 0 hFE-1 DC Current Gain IC= 2A ; VCE= 2V hFE-2 DC Current Gain IC= 3A ; VCE= 2V Switching Times ton Turn-On Time ts Storage Time tf Fall Time IC= 3A; IB1= IB2= 30mA; RL= 50Ω,VCC≈150V  hFE-1 Classifications M L 400-800 600-1200 K 1000-3000 2SD1162 MIN TYP. MAX UNIT 300 V 1.5 V 2.0 V 10 μA 400 3000 100 1.0 μs 12 μs 6 μs NOTICE： ISC r.