2SD1115 - INCHANGE

2SD1115 NPN Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage switching, igniter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage .

Features

g Voltage s; 300 f= 50Hz V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 400 TYP. MAX UNIT V V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 20mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 20mA 2.0 V ICEO Collector Cutoff Current VCE= 300V; RBE= ∞ 100 μA hFE DC Current Gain IC= 2A; VCE= 2V 500 Switching times ton Turn-on Time toff Turn-Off Time IC= 2A, IB1= IB2= 20mA 1.0 μs 22 μs NOTICE： ISC reserves the rights to make changes of the content herein the datashee.