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2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Power Amplifier Applications • High DC current gain: hFE = 180 to 390 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.2 V (max) • High-speed switching: tf = 15 ns (typ.) Unit : mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base .
nt/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-09-24 Free Datasheet http://www.datasheet4u.com/ 2SC6125 Electrical Characteristi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC6120 |
Isahaya Electronics |
Silicon NPN Transistor |
|
| 2 | 2SC6123 |
Renesas |
Silicon power transistor |
|
| 3 | 2SC6124 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SC6126 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2SC6127 |
Toshiba |
Silicon NPN Transistor |
|
| 6 | 2SC6100 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC6101 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SC6102 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SC6102 |
ON Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SC6105 |
Toshiba |
Silicon NPN Transistor |
|
| 11 | 2SC6106 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 12 | 2SC6112 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|