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Ordering number : ENA1154 www.DataSheet4U.com 2SC6112 SANYO Semiconductors DATA SHEET 2SC6112 Features • • • • NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High breakdown voltage and high reliability. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Par.
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NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
High breakdown voltage and high reliability. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg PW≤300μs, duty cycle≤10% Tc=25°C Conditions Ratings 1000 500 7 15 25 1.75 55 150 --55 to +150 Unit V V V A A W W °.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC6113 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC6114 |
Rohm |
Small signal low frequency amplifier |
|
| 3 | 2SC6116LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | 2SC6117 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 5 | 2SC6118LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | 2SC6100 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC6101 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SC6102 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SC6102 |
ON Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SC6105 |
Toshiba |
Silicon NPN Transistor |
|
| 11 | 2SC6106 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 12 | 2SC6120 |
Isahaya Electronics |
Silicon NPN Transistor |
|