2SC6105 - Toshiba

2SC6105 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC6105 2SC6105 High Voltage Switching Applications • High voltage: VCEO = 600 V (max) • Low saturation voltage: VCE (sat) (1) = 1.0 V (max) @IC = 20 mA, IB = 0.5 mA Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-.

Features

etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking HZ 1 2009-06-02 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Symbol ICBO IEBO V.