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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6100 2SC6100 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 2.0±0.1 0.65±0.05 • High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = .
rd. (25.4 mm × 25.4 mm × 0.8 mmt, Cu Pad: 645 mm2 ) Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mmt, Cu Pad: 645 mm2 ) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC6101 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC6102 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SC6102 |
ON Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SC6105 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2SC6106 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | 2SC6112 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 7 | 2SC6113 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 8 | 2SC6114 |
Rohm |
Small signal low frequency amplifier |
|
| 9 | 2SC6116LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 10 | 2SC6117 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 11 | 2SC6118LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 12 | 2SC6120 |
Isahaya Electronics |
Silicon NPN Transistor |
|