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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Speed Switching ·Low Saturation Voltage ·Complement to Type 2SA2098 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, lamp drivers, motor drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE U.
erwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.35A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 0.35A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 2V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V Sw.
2SC5887 - Sanyo Semicon Device
Ordering number : ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Curr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5880 |
Rohm |
Power transistor |
|
| 2 | 2SC5881 |
Rohm |
Power transistor |
|
| 3 | 2SC5882 |
ETC |
SILICON NPN EPITAXIAL TRANSISTOR |
|
| 4 | 2SC5883 |
ISAHAYA |
SMALL-SIGNAL TRANSISTOR |
|
| 5 | 2SC5884 |
Panasonic Semiconductor |
NPN Transistor |
|
| 6 | 2SC5885 |
Panasonic Semiconductor |
NPN Transistor |
|
| 7 | 2SC5885 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 8 | 2SC5885 |
Inchange Semiconductor Company Limited |
Silicon NPN Power Transistor |
|
| 9 | 2SC5886 |
Toshiba Semiconductor |
NPN Transistor |
|
| 10 | 2SC5886A |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC5886A |
Toshiba |
Silicon NPN Transistor |
|
| 12 | 2SC5888 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |
|