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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications DC/DC Converter Applications 2SC5886A Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) • High-speed switching: tf = 95 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol R.
ng conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2004-05 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristic Collector cutoff current Emitter cutoff current Collector-emitter breakdown voltage DC current gain Collector-emitter saturatio.
2SC5886A - INCHANGE
·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5886 |
Toshiba Semiconductor |
NPN Transistor |
|
| 2 | 2SC5880 |
Rohm |
Power transistor |
|
| 3 | 2SC5881 |
Rohm |
Power transistor |
|
| 4 | 2SC5882 |
ETC |
SILICON NPN EPITAXIAL TRANSISTOR |
|
| 5 | 2SC5883 |
ISAHAYA |
SMALL-SIGNAL TRANSISTOR |
|
| 6 | 2SC5884 |
Panasonic Semiconductor |
NPN Transistor |
|
| 7 | 2SC5885 |
Panasonic Semiconductor |
NPN Transistor |
|
| 8 | 2SC5885 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 9 | 2SC5885 |
Inchange Semiconductor Company Limited |
Silicon NPN Power Transistor |
|
| 10 | 2SC5887 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC5887 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |
|
| 12 | 2SC5888 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |
|