2SC5883 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, It is designed for high frequency application. Since it is a super-thin flat lead type package,a high-density mounting are possible. FEATURE ●Super-thin flat lead type package. t=0.45mm ●High gain bandwidth product. fT=8.0GHz ●High gain, low noise. ●Can operate at low voltag.
RISTICS(Ta=25℃) Parameter Symbol Test conditions Collector cut off current Emitter cut off current DC forward current gain Gain bandwidth product Collector output capacitance Insertion power gain Noise figure ICBO IEBO hFE fT Cob |S21|2 NF V CB=10V, I E=0mA V EB=1V, I C=0mA V CE=5V, I C=10mA V CE=5V, I E=10mA V CB=5V, I E=0mA,f=1MHz V CE=5V, I C=10mA,f=1GHz V CE=5V, I C=5mA,f=1GHz Limits Min Typ Max Unit - - 1.0 μA - - 1.0 μA 50 - 250 5.0 8.0 - GHz - 0.8 - pF 9.0 12.0 - dB - 1.4 - dB ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPOR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5880 |
Rohm |
Power transistor | |
2 | 2SC5881 |
Rohm |
Power transistor | |
3 | 2SC5882 |
ETC |
SILICON NPN EPITAXIAL TRANSISTOR | |
4 | 2SC5884 |
Panasonic Semiconductor |
NPN Transistor | |
5 | 2SC5885 |
Panasonic Semiconductor |
NPN Transistor | |
6 | 2SC5885 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
7 | 2SC5885 |
Inchange Semiconductor Company Limited |
Silicon NPN Power Transistor | |
8 | 2SC5886 |
Toshiba Semiconductor |
NPN Transistor | |
9 | 2SC5886A |
INCHANGE |
NPN Transistor | |
10 | 2SC5886A |
Toshiba |
Silicon NPN Transistor | |
11 | 2SC5887 |
INCHANGE |
NPN Transistor | |
12 | 2SC5887 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |