2SC5881
Transistors
Power transistor (60V, 5A)
2SC5881
zFeatures 1) High speed switching. (Tf : Typ. : 25ns at IC = 5A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 3.0A, IB = 300mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2096 zExternal dimensions (Unit : mm)
(SC-63)
1) High speed switching. (Tf : Typ. : 25ns at IC = 5A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 3.0A, IB = 300mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2096 zExternal dimensions (Unit : mm)
(SC-63)
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5880 |
Rohm |
Power transistor | |
2 | 2SC5882 |
ETC |
SILICON NPN EPITAXIAL TRANSISTOR | |
3 | 2SC5883 |
ISAHAYA |
SMALL-SIGNAL TRANSISTOR | |
4 | 2SC5884 |
Panasonic Semiconductor |
NPN Transistor | |
5 | 2SC5885 |
Panasonic Semiconductor |
NPN Transistor | |
6 | 2SC5885 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
7 | 2SC5885 |
Inchange Semiconductor Company Limited |
Silicon NPN Power Transistor | |
8 | 2SC5886 |
Toshiba Semiconductor |
NPN Transistor | |
9 | 2SC5886A |
INCHANGE |
NPN Transistor | |
10 | 2SC5886A |
Toshiba |
Silicon NPN Transistor | |
11 | 2SC5887 |
INCHANGE |
NPN Transistor | |
12 | 2SC5887 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |