DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz • 6.
• Ideal for low noise high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
• High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz
• 6-pin lead-less minimold package
ORDERING INFORMATION
Part Number NE662M16-A 2SC5704-A NE662M16-T3-A 2SC5704-T3-A
Quantity 50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs.
ABSOLUTE MAXIM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5704-A |
CEL |
NPN SILICON RF TRANSISTOR | |
2 | 2SC5704 |
CEL |
NPN SILICON RF TRANSISTOR | |
3 | 2SC570 |
Toshiba |
SILICON NPN TRANSISTOR | |
4 | 2SC5700 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
5 | 2SC5700 |
Renesas |
Silicon NPN Transistor | |
6 | 2SC5702 |
Renesas |
Silicon NPN Epitaxial Type Transistor | |
7 | 2SC5702 |
Hitachi |
Silicon NPN Transistor | |
8 | 2SC5703 |
Toshiba Semiconductor |
NPN Transistor | |
9 | 2SC5706 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
10 | 2SC5706 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
11 | 2SC5706 |
Weitron Technology |
NPN Transistor | |
12 | 2SC5706 |
ON Semiconductor |
Bipolar Transistor |