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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed and high voltage switching applications. ·Switching regulator applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA.
lector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 800V; IE=0 IEBO Emitter Cutoff Current VEB= 7V; IC=0 hFE-1 DC Current Gain IC= 10mA; VCE= 5V hFE-2 DC Current Gain IC= 0.5A; VCE= 5V 2SC5354 MIN TYP. MAX UNIT 800 V 900 V 1.0 V 1.3 V 0.1 mA 1.0 mA 10 15 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without.
2SC5354 - Toshiba Semiconductor
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching.
2SC5354 - Weitron
2SC5354 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free FEATURES * Excellent hFE Linearity * Low Noise 1. BASE 2. E.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC535 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC535 |
Renesas |
Silicon NPN Transistor |
|
| 3 | 2SC5351 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 4 | 2SC5352 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SC5352 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | 2SC5353 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 7 | 2SC5353 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC5353 |
UTC |
HIGH VOLTAGE NPN TRANSISTOR |
|
| 9 | 2SC5353B |
UTC |
HIGH VOLTAGE NPN TRANSISTOR |
|
| 10 | 2SC5355 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 11 | 2SC5355 |
Kexin |
Silicon NPN Transistor |
|
| 12 | 2SC5356 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|