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SMD Type Silicon NPN Triple Diffused Type 2SC5356 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High collectors breakdown voltage: VCEO = 800 V High DC current gain: hFE = 15 (min) (IC = 0.15 A) +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.
High collectors breakdown voltage: VCEO = 800 V High DC current gain: hFE = 15 (min) (IC = 0.15 A) +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ( DC) Collector current (Pulse) Base current Collector power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature range Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 900 80.
2SC5356 - Toshiba Semiconductor
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 2SC5356 High Voltage Switching Applications .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC535 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC535 |
Renesas |
Silicon NPN Transistor |
|
| 3 | 2SC5351 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 4 | 2SC5352 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SC5352 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | 2SC5353 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 7 | 2SC5353 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC5353 |
UTC |
HIGH VOLTAGE NPN TRANSISTOR |
|
| 9 | 2SC5353B |
UTC |
HIGH VOLTAGE NPN TRANSISTOR |
|
| 10 | 2SC5354 |
Toshiba Semiconductor |
NPN Transistor |
|
| 11 | 2SC5354 |
Weitron |
NPN Transistor |
|
| 12 | 2SC5354 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|