2SC5354 Inchange Semiconductor Silicon NPN Power Transistor Datasheet, en stock, prix

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2SC5354

Inchange Semiconductor
2SC5354
2SC5354 2SC5354
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Part Number 2SC5354
Manufacturer Inchange Semiconductor
Description ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed and...
Features lector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 800V; IE=0 IEBO Emitter Cutoff Current VEB= 7V; IC=0 hFE-1 DC Current Gain IC= 10mA; VCE= 5V hFE-2 DC Current Gain IC= 0.5A; VCE= 5V 2SC5354 MIN TYP. MAX UNIT 800 V 900 V 1.0 V 1.3 V 0.1 mA 1.0 mA 10 15 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without...

Document Datasheet 2SC5354 Data Sheet
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