2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5353 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm • • Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max) High collectors breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25°C) Characterist.
ng conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Datasheet pdf - http://www.DataSheet4U.net/ 2SC5353 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltag.
Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excelle.
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) ·Low Collector Saturation Voltage : VCE(sat) =1V(Max) @ I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC535 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
2 | 2SC535 |
Renesas |
Silicon NPN Transistor | |
3 | 2SC5351 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
4 | 2SC5352 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
5 | 2SC5352 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | 2SC5353B |
UTC |
HIGH VOLTAGE NPN TRANSISTOR | |
7 | 2SC5354 |
Toshiba Semiconductor |
NPN Transistor | |
8 | 2SC5354 |
Weitron |
NPN Transistor | |
9 | 2SC5354 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | 2SC5355 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
11 | 2SC5355 |
Kexin |
Silicon NPN Transistor | |
12 | 2SC5356 |
Toshiba Semiconductor |
NPN TRANSISTOR |