Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Ordering number:ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features · High breakdown voltage (VCBO=1200V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2079D [2SC5305] 10.0 3.2 3.5 7.2 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 0.7.
· High breakdown voltage (VCBO=1200V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2079D
[2SC5305]
10.0 3.2
3.5 7.2
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75 1 2 3
0.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
1:Base 2:Collector 3:Emitter SANYO:TO-220FI (LS)
2.55
2.55
C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5305 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC5305 |
UTC |
HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR |
|
| 3 | 2SC5300 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 4 | 2SC5301 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 5 | 2SC5302 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 6 | 2SC5302 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC5303 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 8 | 2SC5304LS |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 9 | 2SC5307 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC5310 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 11 | 2SC5310 |
Kexin |
NPN Epitaxial Planar Silicon Transistors |
|
| 12 | 2SC5315 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|