2SC5200H - INCHANGE

2SC5200H NPN Transistor

·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃.

Features

er Breakdown Voltage IC= 1mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= 5V ICBO Collector Cutoff Current VCB= 300V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 7A ; VCE= 5V COB Output Capacitance IE=0 ; VCB= 10V;f= 1.0MHz fT Current-Gain—Bandwidth Product IC=1A ; VCE= 5V MIN TYP. MAX UNIT 300 V 0.4 3.0 V 1.0 1.5 V 5 μA 5 μA 55 160 35 700 pF 20 MHz  hFE-1 Classifications R 55-110 O 80-160 isc website：www.i.