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2SC5200H |
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| Part Number | 2SC5200H |
| Manufacturer | INCHANGE |
| Description | ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A... |
| Features |
er Breakdown Voltage IC= 1mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A
VBE(on)
Base-Emitter On Voltage
IC= 7A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 300V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 7A ; VCE= 5V
COB
Output Capacitance
IE=0 ; VCB= 10V;f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC=1A ; VCE= 5V
MIN TYP. MAX UNIT
300
V
0.4 3.0
V
1.0 1.5
V
5
μA
5
μA
55
160
35
700
pF
20
MHz
hFE-1 Classifications R 55-110 O 80-160 isc website：www.i... |
| Document |
 2SC5200H Data Sheet
PDF 212.78KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5200 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC5200 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 3 | 2SC5200 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 4 | 2SC5200 |
Thinki Semiconductor |
150 Watt Silicon NPN Power Transistors |
|
| 5 | 2SC5200 |
ON Semiconductor |
NPN Transistor |
|